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| Data Sheet No. PD-6.075-G IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 HIGH VOLTAGE HALF BRIDGE Features * Output Power MOSFETs in half-bridge configuration * 500V rated breakdown voltage * High side gate drive designed for bootstrap * * * * * operation Matched propagation delay for both channels Undervoltage lockout 5V Schmitt-triggered input logic Half-Bridge output in phase with HIN Heatsink version (P2) with improved PD Product Summary VIN (max) ton/off trr RDS(on) 250V- 214/224 500V - 420 130 & 90 ns 260 ns 2.0 - H214 1.1 - H224 3.0 - H420 2.0W 4.0W - P2 Description The IR01H(D)xxx is a high voltage, high speed half bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET power MOSFET technology, enable ruggedized single package construction. The logic inputs are compatible with standard CMOS or LSTTL outputs. The front end features an independent high and low side driver in phase with the logic compatible input signals. The output features two HEXFETs in a halfbridge configuration with a high pulse current buffer stage designed for minimum cross-conduction in the half bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use. PD(TA = 25oC) Packages Typical Connection HV DC Bus VIN D1 NOTE: D1 is not required for the HD type 6 Vcc H IN L IN 1 Vcc VB 2 H IN VIN VO 9 3 L IN 7 COM TO LOAD 4 COM 1 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VIN VB VO VIH/VIL VCC dV/dt PD RTHJA RTHJC TJ TS TL High Voltage Supply Definition 214/224 420 High Side Floating Supply Absolute Voltage Half-Bridge Output Logic Input Voltage (HIN & LIN) Low Side and Logic Fixed Supply Voltage Peak Diode Recovery dv/dt Package Power Dissipation @ TA +25oC - P2 Thermal Resistance, Junction to Ambient - P2 Thermal Resistance, Junction to Case (heatsink) Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) - P2 214/224 420 Min. -0.3 -0.3 -0.3 -0.3 -0.3 - 0.3 -0.3 -- -- -- -- -55 -55 -- Max. 250 500 275 525 VIN + 0.3 Vcc + 0.3 25 3.50 2 4.0 60 30 20 150 150 300 Units V V V V V/ns W W C/W o W C/W C o C/W C C 2 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. Symbol VB VIN VO VCC VIH/VIL TA Id High Voltage Supply Definition High Side Floating Supply Absolute Voltage 214/224 420 Half-Bridge Output Voltage Low Side and Logic Fixed Supply Voltage Logic Input Voltage (HIN & LIN) Ambient Temperature Continuous Drain Current (TA = 25oC) 214 214-P2 224 224-P2 420 420-P2 (TA = 85 oC) 214 214-P2 224 224-P2 420 420-P2 (TC = 25oC) 214-P2 224-P2 420-P2 214/224 420 Min. VO + 10 -- -- (note 1) -- 10 0 -40 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max. VO + 20 250 500 250 500 20 VCC 125 0.85 1.4 1.1 1.9 0.7 1.1 0.55 0.9 0.7 1.4 0.5 0.8 1.7 2.3 1.4 Units V V V V V V oC A A A Note 1: Logic operational for VO of -5 to 250V (214/224) and 500V (420). Logic state held for V0 of -5 to -VB 3 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. Switching time waveform definitions are shown in figure 2. Symbol ton toff tr tf MT trr Qrr Definition Turn-On Propagation Delay (see note 2) Turn-Off Propagation Delay (see note 2) Turn-On Rise Time (see note 2) Turn-Off Fall Time (see note 2) Delay Matching, HS & LS Turn-On/Off Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) Min. Typ. Max. Units Test Conditions -- -- -- -- -- -- -- 130 90 80 40 30 260 0.7 200 200 120 70 -- -- -- C IF = 0.7A di/dt = 100 A/us Vs = 0V Vs = 500V ns Note 2: Switching times as specified and illustrated in figure 2 are referenced to the MOSFET gate input voltage. This is shown as HO in figure 2. Static Electrical Characteristics VBIAS (VCC, VB) = 15V and TA = 25C unless otherwise specified. The Input voltage and current levels are referenced to COM. Symbol VCCUV+ VCCUVIQCC IQBS Ios VIH VIL IIN+ IINRds(on) Threshold Definition VCC Supply Undervoltage Positive Going VCC Supply Undervoltage Negative Going Threshold Quiescent VCC Supply Current Quiescent VBS Supply Current Offset Supply Leakage Current Logic "1" Input Voltage Logic "0" Input Voltage Logic "1" Input Bias Current Logic "0" Input Bias Current Static Drain-to-Source On-Resistance 214 224 420 Min. Typ. Max. Units Test Conditions 8.8 7.5 -- -- -- 2.7 -- -- -- -- -- -- -- -- 9.3 8.2 140 20 -- -- -- 20 -- 2.0 1.1 3.0 0.8 0.85 9.8 8.6 240 50 50 -- 0.8 40 1.0 -- -- -- -- -- V V V A A A V V B = VS = 500V VCC = 10V to 20V VCC = 10V to 20V V V VCC = 10V to 20V A V Id=850mA/TJ=150 C Id=1.1A/T J=150 C Id=700mA/TJ=150 C Id=700mA/TJ=150 C Id=1.1A/TJ=150 C o o o o o VSD Diode Forward Voltage 214/420 224 4 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 Functional Block Diagram V D1 B VIN 6 9 1 Vcc H O IRFCxxx 2 H IN IR2101 V S 7 VO IRFCxxx 3 L IN L O NOTE: xxx = 214 or 224 or 420 D1 included in HD type only 4 COM NOTE: xxx = 214 or 224 or 420 Lead Definitions Symbol VCC HIN LIN VB V+ VO COM Description Logic and internal gate drive supply voltage. Logic input for high side Half Bridge output, in phase Logic input for low side Half Bridge output, in phase High side gate drive floating supply High voltage supply Half Bridge output Logic and low side of Half Bridge return Lead Assignments 1 2 3 4 6 7 9 Vcc HIN LIN COM VB VO VIN 9 6 1 2 3 4 7 5 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 LIN H IN to n 50% 50% tr 90% to ff 90% tf HIN HO 10% 10% V+ VO 0 VO Figure 1. Input/Output Timing Diagram Figure 2. Switching Time Waveform Definitions Figure 3. Delay Matching Waveform Definitions 6 IR01H(D)214 / IR01H(D)214-P2 IR01H(D)224 / IR01H(D)224-P2 IR01H(D)420 / IR01H(D)420-P2 16.89 (.665) 16.63 (.655) 3.18 (.125) 2.92 (.115) NOTES: 1. Dimensioning & Tolerancing per ANSI Y14.5M-1982 2. Controlling dimension: Inch 3. Dimensions are shown in millimeters (inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 473 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98 7 |
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